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Thermal characterisation of AlGaN/GaN HEMTs grown on silicon and sapphire substrates based on pulsed I-V measurements

✍ Scribed by Aubry, R.; Jacquet, J.-C.; Dessertenne, B.; Chartier, E.; Adam, D.; Cordier, Y.; Semond, F.; Massies, J.; DiForte-Poisson, M.-A.; Romann, A.; Delage, S. L.


Book ID
120399261
Publisher
EDP Sciences
Year
2003
Tongue
English
Weight
463 KB
Volume
22
Category
Article
ISSN
1286-0042

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## Abstract A detailed photoluminescence (PL), time‐resolved photoluminescence (TRPL), and photoreflectance (PR) analysis of AlGaN/GaN heterostructures grown on different substrates: sapphire and silicon carbide (SiC) is presented in this paper. The properties of high electron mobility transistors