✦ LIBER ✦

Improved surface morphology and mobility of AlGaN/GaN HEMT grown on silicon substrate

✍ Scribed by Xueliang Zhu; Jun Ma; Tongde Huang; Ming Li; Ka Ming Wong; Kei May Lau

Book ID: 112182317
Publisher: John Wiley and Sons
Year: 2011
Tongue: English
Weight: 710 KB
Volume: 9
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.201100447

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Large Area AlGaN/GaN HEMTs Grown on Insu

Large Area AlGaN/GaN HEMTs Grown on Insulating Silicon Carbide Substrates

✍ Lossy, R. ;Chaturvedi, N. ;Heymann, P. ;W�rfl, J. ;M�ller, S. ;K�hler, K. 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 94 KB 👁 2 views

Large periphery Al 0.25 Ga 0.75 N/GaN-HEMTs on SiC-substrates are fabricated on a 2-inch process line using stepper lithography. DC characteristics reveal current densities above 1.2 A/mm and intrinsic transconductances of 360 mS/mm. Depending on device size the maximum frequency of oscillation f ma

Growth and Characterisation of AlGaN/GaN

Growth and Characterisation of AlGaN/GaN HEMT on Silicon Substrates

✍ Kalisch, H. ;Dikme, Y. ;Gerstenbrandt, G. ;Alam, A. ;Szymakowski, A. ;Klockenhof 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 154 KB 👁 2 views

Non-Arrhenius Degradation of AlGaN/GaN H

Non-Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates

✍ Tapajna, M.; Killat, N.; Moereke, J.; Paskova, T.; Evans, K. R.; Leach, J.; Li, 📂 Article 📅 2012 🏛 IEEE 🌐 English ⚖ 338 KB

Transient thermal characterization of Al

Transient thermal characterization of AlGaN/GaN HEMTs grown on silicon

✍ Kuzmik, J.; Bychikhin, S.; Neuburger, M.; Dadgar, A.; Krost, A.; Kohn, E.; Pogan 📂 Article 📅 2005 🏛 IEEE 🌐 English ⚖ 521 KB

Deep levels and nonlinear characterizati

Deep levels and nonlinear characterization of AlGaN/GaN HEMTs on silicon carbide substrate

✍ M. Gassoumi; J.M. Bluet; C. Gaquière; G. Guillot; H. Maaref 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 291 KB

Determination of channel temperature in

Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method

✍ Kuzmik, J.; Javorka, R.; Alam, A.; Marso, M.; Heuken, M.; Kordos, P. 📂 Article 📅 2002 🏛 IEEE 🌐 English ⚖ 217 KB