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Microwave noise performances of AlGaN∕GaN HEMTs on semi-insulating 6H-SiC substrates

✍ Scribed by Lee, J.-W.; Kumar, V.; Schwindt, R.; Kuliev, A.; Birkhahn, R.; Gotthold, D.; Guo, S.; Albert, B.; Adesida, I.

Book ID
115508474
Publisher
The Institution of Electrical Engineers
Year
2004
Tongue
English
Weight
197 KB
Volume
40
Category
Article
ISSN
0013-5194

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## Abstract We report on device performance and reliability of our 3″ GaN high electron mobility transistor (HEMT) technology. AlGaN/GaN HEMT structures are grown on semi‐insulating SiC substrates by metal‐organic chemical vapor deposition (MOCVD) with sheet resistance uniformities better than 2%.