Large periphery Al 0.25 Ga 0.75 N/GaN-HEMTs on SiC-substrates are fabricated on a 2-inch process line using stepper lithography. DC characteristics reveal current densities above 1.2 A/mm and intrinsic transconductances of 360 mS/mm. Depending on device size the maximum frequency of oscillation f ma
โฆ LIBER โฆ
High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
โ Scribed by Sheppard, S.T.; Doverspike, K.; Pribble, W.L.; Allen, S.T.; Palmour, J.W.; Kehias, L.T.; Jenkins, T.J.
- Book ID
- 115496386
- Publisher
- IEEE
- Year
- 1999
- Tongue
- English
- Weight
- 85 KB
- Volume
- 20
- Category
- Article
- ISSN
- 0741-3106
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Large Area AlGaN/GaN HEMTs Grown on Insu
โ
Lossy, R. ;Chaturvedi, N. ;Heymann, P. ;W๏ฟฝrfl, J. ;M๏ฟฝller, S. ;K๏ฟฝhler, K.
๐
Article
๐
2002
๐
John Wiley and Sons
๐
English
โ 94 KB
๐ 2 views
Microwave noise performances of AlGaNโGa
โ
Lee, J.-W.; Kumar, V.; Schwindt, R.; Kuliev, A.; Birkhahn, R.; Gotthold, D.; Guo
๐
Article
๐
2004
๐
The Institution of Electrical Engineers
๐
English
โ 197 KB
High-efficiency GaN HEMTs on 3-inch semi
โ
Waltereit, P. ;Bronner, W. ;Quay, R. ;Dammann, M. ;Mรผller, S. ;Kiefer, R. ;Rayno
๐
Article
๐
2008
๐
John Wiley and Sons
๐
English
โ 358 KB
## Abstract We report on device performance and reliability of our 3โณ GaN high electron mobility transistor (HEMT) technology. AlGaN/GaN HEMT structures are grown on semiโinsulating SiC substrates by metalโorganic chemical vapor deposition (MOCVD) with sheet resistance uniformities better than 2%.
Deep levels and nonlinear characterizati
โ
M. Gassoumi; J.M. Bluet; C. Gaquiรจre; G. Guillot; H. Maaref
๐
Article
๐
2009
๐
Elsevier Science
๐
English
โ 291 KB
First microwave power performance of AlG
โ
Hoel, V.; Defrance, N.; De Jaeger, J.C.; Gerard, H.; Gaquiere, C.; Lahreche, H.;
๐
Article
๐
2008
๐
The Institution of Electrical Engineers
๐
English
โ 150 KB
High-power broad-band AlGaN/GaN HEMT MMI
โ
Green, B.M.; Tilak, V.; Lee, S.; Kim, H.; Smart, J.A.; Webb, K.J.; Shealy, J.R.;
๐
Article
๐
2001
๐
IEEE
๐
English
โ 268 KB