This paper report on the long-term stress (1000 h) carried out on AlGaN/GaN HEMTs processed on composite SopSiC substrate. Almost all tested devices present good device stability and promising performance. The reliability issues identified during the work are clearly related to the high levels of ga
β¦ LIBER β¦
First microwave power performance of AlGaN/GaN HEMTs on SopSiC composite substrate
β Scribed by Hoel, V.; Defrance, N.; De Jaeger, J.C.; Gerard, H.; Gaquiere, C.; Lahreche, H.; Langer, R.; Wilk, A.; Lijadi, M.; Delage, S.
- Book ID
- 115497683
- Publisher
- The Institution of Electrical Engineers
- Year
- 2008
- Tongue
- English
- Weight
- 150 KB
- Volume
- 44
- Category
- Article
- ISSN
- 0013-5194
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Subject classification: 73.30.+y; 73.40.Kp; S7.14 Undoped AlGaN/GaN HEMTs grown on SiC substrates have recently demonstrated record output power density of 10.7 W/mm (cw) and total output power of 10 W at 10 GHz (L. F. Eastman, Joint ONR/MURI Review (5/15-16, 2001), CA (USA) [1]). In this paper, we
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