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Growth temperature dependence of strain in a GaN epilayer, grown on ac-plane sapphire substrate

โœ Scribed by S. I. Cho; K. Chang; M. S. Kwon


Publisher
Springer
Year
2007
Tongue
English
Weight
170 KB
Volume
43
Category
Article
ISSN
0022-2461

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Growth temperature induced effects in no
โœ Mohana K. Rajpalke; Thirumaleshwara N. Bhat; Basanta Roul; Mahesh Kumar; P. Misr ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 633 KB

Non-polar a-plane GaN films were grown on an r-plane sapphire substrate by plasma assisted molecular beam epitaxy (PAMBE). The effect of growth temperature on structural, morphological and optical properties has been studied. The growth of non-polar a-plane (1 1 ร€ 2 0) orientation of the GaN epilaye