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Strain analysis of a GaN epilayer grown on a c-plane sapphire substrate with different growth times

✍ Scribed by S. I. Cho; K. Chang; Myoung Seok Kwon


Publisher
Springer
Year
2007
Tongue
English
Weight
142 KB
Volume
42
Category
Article
ISSN
0022-2461

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Optical anisotropy in the growth plane has been observed by reflectance and photoluminescence (PL) spectroscopy on nitride epilayers grown on A-plane sapphire. This anisotropy results from the strongly anisotropic thermal strain which is such that the wurtzite symmetry goes from C 6v to C 2v . Time-