Anisotropy of the In-Plane Strain in GaN Grown on A-Plane Sapphire
β Scribed by P.P. Paskov; V. Darakchieva; T. Paskova; P.O. Holtz; B. Monemar
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 190 KB
- Volume
- 234
- Category
- Article
- ISSN
- 0370-1972
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π SIMILAR VOLUMES
Optical anisotropy in the growth plane has been observed by reflectance and photoluminescence (PL) spectroscopy on nitride epilayers grown on A-plane sapphire. This anisotropy results from the strongly anisotropic thermal strain which is such that the wurtzite symmetry goes from C 6v to C 2v . Time-
Prevention of damage in the form of through-thickness cracking and/or interfacial debonding, leading to scaling is a key issue in the engineering of coatings. In this context, reliable testing methods are needed for the quantitative assessment of the overall quality and reliability of deposition pro