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Anisotropy of the Free Exciton Emission in GaN Grown on a-Plane Sapphire

✍ Scribed by Paskov, P. P. ;Paskova, T. ;Holtz, P. O. ;Monemar, B.


Publisher
John Wiley and Sons
Year
2002
Tongue
English
Weight
135 KB
Volume
190
Category
Article
ISSN
0031-8965

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Optical anisotropy in the growth plane has been observed by reflectance and photoluminescence (PL) spectroscopy on nitride epilayers grown on A-plane sapphire. This anisotropy results from the strongly anisotropic thermal strain which is such that the wurtzite symmetry goes from C 6v to C 2v . Time-