Growth temperature induced effects in non-polar a-plane GaN on r-plane sapphire substrate by RF-MBE
✍ Scribed by Mohana K. Rajpalke; Thirumaleshwara N. Bhat; Basanta Roul; Mahesh Kumar; P. Misra; L.M. Kukreja; Neeraj Sinha; S.B. Krupanidhi
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 633 KB
- Volume
- 314
- Category
- Article
- ISSN
- 0022-0248
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✦ Synopsis
Non-polar a-plane GaN films were grown on an r-plane sapphire substrate by plasma assisted molecular beam epitaxy (PAMBE). The effect of growth temperature on structural, morphological and optical properties has been studied. The growth of non-polar a-plane (1 1 À 2 0) orientation of the GaN epilayers were confirmed by high resolution X-ray diffraction (HRXRD) study. The X-ray rocking curve (XRC) full width at half maximum of the (1 1 À 2 0) reflection shows in-plane anisotropic behavior and found to decrease with increase in growth temperature. The atomic force micrograph (AFM) shows island-like growth for the film grown at a lower temperature. Surface roughness has been decreased with increase in growth temperature. Room temperature photoluminescence shows near band edge emission at 3.434-3.442 eV. The film grown at 800 1C shows emission at 2.2 eV, which is attributed to yellow luminescence along with near band edge emission.