Explanation of threshold voltage scaling in enhancement-mode InAlN/AlN–GaN metal oxide semiconductor high electron mobility transistors on Si substrates

✍ Scribed by A. Alexewicz; C. Ostermaier; C. Henkel; O. Bethge; J.-F. Carlin; L. Lugani; N. Grandjean; E. Bertagnolli; D. Pogany; G. Strasser

• Book ID: 113937740
• Publisher: Elsevier Science
• Year: 2012
• Tongue: English
• Weight: 389 KB
• Volume: 520
• Category: Article
• ISSN: 0040-6090
• DOI: 10.1016/j.tsf.2012.05.073