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A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistors

✍ Scribed by TÌapajna, M.; KuzmiÌk, J.

Book ID: 120768541
Publisher: American Institute of Physics
Year: 2012
Tongue: English
Weight: 782 KB
Volume: 100
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3694768

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