𝔖 Bobbio Scriptorium
✦   LIBER   ✦

AlGaN/GaN-on-Silicon Metal–Oxide–Semiconductor High-Electron-Mobility Transistor with Breakdown Voltage of 800 V and On-State Resistance of 3 m$\Omega$$\cdot$cm$^{2}$ Using a Complementary Metal–Oxide–Semiconductor Compatible Gold-Free Process

✍ Scribed by Liu, Xinke; Zhan, Chunlei; Chan, Kwok Wai; Liu, Wei; Tan, Leng Seow; Chen, Kevin Jing; Yeo, Yee-Chia

Book ID
121863023
Publisher
Institute of Pure and Applied Physics
Year
2012
Tongue
English
Weight
858 KB
Volume
5
Category
Article
ISSN
1882-0778

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[IEEE 2012 International Symposium on VL
[IEEE 2012 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu (2012.04.23-2012.04.25)] Proceedings of Technical Program of 2012 VLSI Technology, System and Application - AlGaN/GaN-on-Silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm2 using a CMOS-compatible gold-free process
✍ Xinke Liu, ; Chunlei Zhan, ; Kwok Wai Chan, ; Wei Liu, ; Leng Seow Tan, ; Kie Le 📂 Article 📅 2012 🏛 IEEE ⚖ 450 KB