[IEEE 2012 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu (2012.04.23-2012.04.25)] Proceedings of Technical Program of 2012 VLSI Technology, System and Application - AlGaN/GaN-on-Silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm2 using a CMOS-compatible gold-free process

✍ Scribed by Xinke Liu, ; Chunlei Zhan, ; Kwok Wai Chan, ; Wei Liu, ; Leng Seow Tan, ; Kie Leong Teo, ; Chen, K. J.; Yee-Chia Yeo,

• Book ID: 120981231
• Publisher: IEEE
• Year: 2012
• Weight: 450 KB
• Category: Article
• ISBN: 1457720825
• DOI: 10.1109/VLSI-TSA.2012.6210119