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[IEEE 2012 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu (2012.04.23-2012.04.25)] Proceedings of Technical Program of 2012 VLSI Technology, System and Application - A 20nm low-power triple-gate multibody 1T-DRAM cell

✍ Scribed by Gamiz, F.; Rodriguez, N.; Cristoloveanu, S.

Book ID: 118058358
Publisher: IEEE
Year: 2012
Weight: 403 KB
Category: Article
ISBN: 1457720825
DOI: 10.1109/vlsi-tsa.2012.6210166

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