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[IEEE 2011 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2011.04.25-2011.04.27)] Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications - Disturb-free Independently-controlled-Gate 7T FinFET SRAM cell

✍ Scribed by Chen, Yin-Nien; Hsieh, Chien-Yu; Fan, Ming-Long; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te

Book ID: 118215298
Publisher: IEEE
Year: 2011
Weight: 545 KB
Volume: 0
Category: Article
ISBN: 1424484936
DOI: 10.1109/vtsa.2011.5872221

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