[IEEE 2012 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu (2012.04.23-2012.04.25)] Proceedings of Technical Program of 2012 VLSI Technology, System and Application - Improvements in low temperature (<625°C) FDSOI devices down to 30nm gate length

✍ Scribed by Xu, C.; Batude, P.; Vinet, M.; Mouis, M.; Casse, M.; Sklenard, B.; Colombeau, B.; Rafhay, Q.; Tabone, C.; Berthoz, J.; Previtali, B.; Mazurier, J.; Brunet, L.; Brevard, L.; Khaja, F. A.; Hartmann, J.; Allain, F.; Toffoli, A.; Kies, R.; Le Royer, C.; Morvan, S.; Pouydebasque, A.; Garros, X.; Pakfar, A.; Tavernier, C.; Faynot, O.; Poiroux, T.

• Book ID: 118202883
• Publisher: IEEE
• Year: 2012
• Weight: 931 KB
• Category: Article
• ISBN: 1457720825
• DOI: 10.1109/vlsi-tsa.2012.6210171