[IEEE 2011 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2011.04.25-2011.04.27)] Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications - UTBOX and ground plane combined with Al2O3 inserted in TiN gate for VT modulation in fully-depleted SOI CMOS transistors

✍ Scribed by Fenouillet-Beranger, C.; Perreau, P.; Casse, M.; Garros, X.; Leroux, C.; Martin, F.; Gassilloud, R.; Bajolet, A.; Tosti, L.; Barnola, S.; Andrieu, F.; Weber, O.; Beneyton, R.; Perrot, C.; de Buttet, C.; Abbate, F.; Pernet, B.; Campidelli, Y.; Pinzelli, L.; Gouraud, P.; Huguenin, J. L.; Borowiak, C.; Peru, S.; Clement, L.; Pantel, R.; Bourdelle, K. K.; Nguyen, B. Y.; Boedt, F.; Denorme, S.; Faynot, O.; Skotnicki, T.; Boeuf, F.

• Book ID: 118062019
• Publisher: IEEE
• Year: 2011
• Weight: 472 KB
• Volume: 0
• Category: Article
• ISBN: 1424484936
• DOI: 10.1109/vtsa.2011.5872254