Control of Threshold Voltage in GaN Based Metal–Oxide–Semiconductor High-Electron Mobility Transistors towards the Normally-Off Operation

✍ Scribed by Ťapajna, Milan; Kuzmík, Ján

• Book ID: 125900860
• Publisher: Institute of Pure and Applied Physics
• Year: 2013
• Tongue: English
• Weight: 636 KB
• Volume: 52
• Category: Article
• ISSN: 0021-4922
• DOI: 10.7567/JJAP.52.08JN08