Electrical and thermal conductivities and thermoelectric power of p-type boron and n-type boron phosphide wafers with amorphous and polycrystalline structures were measured up to high temperatures. The electrical conductivity of amorphous boron wafers is compatible to that of polycrystals at high te
Thermoelectric Properties of Boron and Boron Phosphide Films
โ Scribed by K. Kumashiro; K. Hirata; K. Sato; T. Yokoyama; T. Aisu; T. Ikeda; M. Minaguchi
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 170 KB
- Volume
- 154
- Category
- Article
- ISSN
- 0022-4596
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โฆ Synopsis
Amorphous boron and boron phosphide 5lms were prepared on silica glass by a solid source molecular beam deposition (SSMBD) method and a low-pressure chemical vapor deposition method (LPCVD) by adapting gas source molecular beam deposition at a reactant pressure of 1.33 Pa. The 5lms were characterized by X-ray di4raction, X-ray photon electron spectroscopy (XPS), and Hall e4ect measurements. The experimental results on 5lm growth were correlated with the calculation by an ab initio molecular orbital method. The high-temperature electrical conductivity and thermoelectric power of these 5lms were measured to evaluate the thermoelectric 5gure-of-merit (Z), which was determined by the electrical conductivity of the 5lms. In particular, the Z value for SSMBD boron and LPCVD boron phosphide 5lms was higher (10 ุ5 / K) than those of LPCVD boron 5lms, indicating that they are promising high-temperature thermoelectric materials.
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