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โœฆ   LIBER   โœฆ

Thermoelectric Properties of Boron and Boron Phosphide Films

โœ Scribed by K. Kumashiro; K. Hirata; K. Sato; T. Yokoyama; T. Aisu; T. Ikeda; M. Minaguchi


Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
170 KB
Volume
154
Category
Article
ISSN
0022-4596

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โœฆ Synopsis


Amorphous boron and boron phosphide 5lms were prepared on silica glass by a solid source molecular beam deposition (SSMBD) method and a low-pressure chemical vapor deposition method (LPCVD) by adapting gas source molecular beam deposition at a reactant pressure of 1.33 Pa. The 5lms were characterized by X-ray di4raction, X-ray photon electron spectroscopy (XPS), and Hall e4ect measurements. The experimental results on 5lm growth were correlated with the calculation by an ab initio molecular orbital method. The high-temperature electrical conductivity and thermoelectric power of these 5lms were measured to evaluate the thermoelectric 5gure-of-merit (Z), which was determined by the electrical conductivity of the 5lms. In particular, the Z value for SSMBD boron and LPCVD boron phosphide 5lms was higher (10 ุŠ5 / K) than those of LPCVD boron 5lms, indicating that they are promising high-temperature thermoelectric materials.


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