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Preparation and Electrical Properties of Boron and Boron Phosphide Films Obtained by Gas Source Molecular Beam Deposition

✍ Scribed by Y. Kumashiro; T. Yokoyama; T. Sakamoto; T. Fujita

Publisher: Elsevier Science
Year: 1997
Tongue: English
Weight: 226 KB
Volume: 133
Category: Article
ISSN: 0022-4596
DOI: 10.1006/jssc.1997.7454

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✦ Synopsis

Boron and boron phosphide films were prepared by gas source molecular beam deposition on sapphire crystal at various substrate temperatures up to 800°C using cracked B 2 H 6 (2% in H 2 ) at 300°C and cracked PH 3 (20% in H 2 ) at 900°C. The substrate temperatures and gas flow rates of the reactant gases determined the film growth. The boron films with amorphous structure are p type. Increasing growth times lead to increasing mobilities and decreasing carrier concentrations. Boron phosphide film with maximum P/B ratio is obtained at a substrate temperature of 600°C, below and above which they become phosphorus deficient due to insufficient supply of phosphorus and thermal desorption of the phosphorus as P 2 , respectively, but they are all n type conductors due to phosphorus vacancies.

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