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Preparation of Boron–Silicon Thin Film by Pulsed Laser Deposition and Its Properties

✍ Scribed by Masatoshi Takeda; Masahiro Ichimura; Hideshi Yamaguchi; Yoshiko Sakairi; Kaoru Kimura

Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
133 KB
Volume
154
Category
Article
ISSN
0022-4596

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✦ Synopsis

Boron+silicon amorphous 5lms were prepared by pulsed laser deposition technique. Band gap was estimated from the optical absorption spectrum for the 5lms, and it increased with increasing silicon concentration. The values and concentration dependence of the band gap are nearly the same as those measured for amorphous B+Si prepared by electron beam evaporation. Electrical (dc) conductivity of the 5lms was two or three orders of magnitude larger than that of amorphous boron, and its temperature dependence reveals variable-range-hopping-type behavior (Mott:s low). Concentration dependence of the dc conductivity is similar to that of metal-doped -rhombohedral boron. 2000 Academic Press

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