A pulsed Nd:YAG Laser was used to evaporate solid targets of KTiOAsO 4 (KTA) at power densities of 0.6 to 2.0Γ10 9 W/cm 2 . KTA thin films were deposited on glass, Si (100). After proper annealing treatment, single phase, (orthorh-ombic) polycrystalline KTA thin films were obtained. Some propitious
Polycrystalline Thin Films of Potassium Niobate Prepared by Nd: YAG Pulse Laser Deposition
β Scribed by Dr. Xiang Zhou; Liang-Sheng Wang; Zhi-Feng Jiao; Xiu Wang
- Publisher
- John Wiley and Sons
- Year
- 1996
- Tongue
- English
- Weight
- 223 KB
- Volume
- 31
- Category
- Article
- ISSN
- 0232-1300
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract InAs coβdoped ZnO films were grown on sapphire substrates by pulsed laser deposition. The grown films have been characterized using Xβray diffraction (XRD), Hall effect measurements, Atomic force microscope (AFM) and Field emission scanning electron microscope (FESEM) in order to invest
Boron+silicon amorphous 5lms were prepared by pulsed laser deposition technique. Band gap was estimated from the optical absorption spectrum for the 5lms, and it increased with increasing silicon concentration. The values and concentration dependence of the band gap are nearly the same as those meas
## Abstract Yttriumβstabilized zirconia (YSZ) and cerium gadolinium oxide (CGO) thin films were prepared by pulsed laser deposition (PLD) under different ambient pressures and substrate temperatures. The microstructures of the obtained films are compared with existing structural zone models for thi