A pulsed Nd:YAG Laser was used to evaporate solid targets of KTiOAsO 4 (KTA) at power densities of 0.6 to 2.0×10 9 W/cm 2 . KTA thin films were deposited on glass, Si (100). After proper annealing treatment, single phase, (orthorh-ombic) polycrystalline KTA thin films were obtained. Some propitious
Microstructures of CGO and YSZ Thin Films by Pulsed Laser Deposition
✍ Scribed by A. Infortuna; A. S. Harvey; L. J. Gauckler
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 949 KB
- Volume
- 18
- Category
- Article
- ISSN
- 1616-301X
No coin nor oath required. For personal study only.
✦ Synopsis
Abstract
Yttrium‐stabilized zirconia (YSZ) and cerium gadolinium oxide (CGO) thin films were prepared by pulsed laser deposition (PLD) under different ambient pressures and substrate temperatures. The microstructures of the obtained films are compared with existing structural zone models for thin‐film growth. The model developed by Thornton (1974) for metallic sputtered films is applied to the metal oxide films grown by PLD and gives a good description for the growth process and the dependence of the microstructure on deposition temperature and pressure. A map of formed microstructures is compiled as a function of background pressure and substrate temperature, and the conditions to obtain dense or porous films for YSZ and CGO are established. The two materials show the same dependence on temperature and pressure. Higher background pressure yields more porous films and a fully dense structure cannot be achieved for substrate temperatures in the range from room temperature to 800 °C. Of special interest for us was the realization and characterization of dense films processed at low temperature (< 500 °C) for the preparation of free‐standing membranes to be used in a micro solid oxide fuel cell. We could achieve such films by processing at 400 °C in 0.026 mbar of oxygen. In‐plane electric conductivities of the films were measured and correlated with the microstructures.
📜 SIMILAR VOLUMES
An investigation into the microstructural properties of Co x Ag 1 À x films, grown by pulsed laser deposition, as a function of deposition and postdeposition annealing temperature is reported. Surface morphology and microstructure were investigated by XPS, SEM and TEM measurements. Magnetic measurem
Elemental depth profile examined using secondary-ion mass spectroscopy and structural profile examined using grazing-incident X-ray difiactometry were applied to analyze the growth behavior of Pb, -, La,(Zr,Ti, ~ ,)03 (PLZTO) and Pb, -La,TiO, (PLTO) thin films deposited on a Si substrate. When depos
Boron+silicon amorphous 5lms were prepared by pulsed laser deposition technique. Band gap was estimated from the optical absorption spectrum for the 5lms, and it increased with increasing silicon concentration. The values and concentration dependence of the band gap are nearly the same as those meas