Growth behavior of pulsed-laser-deposited PLZTO thin films

✍ Scribed by Tzu-Feng Tseng; Kuo-Shung Liu; I-Nan Lin; Jyh-Ping Wang; Yong-Chien Ling

• Publisher: American Institute of Chemical Engineers
• Year: 1997
• Tongue: English
• Weight: 666 KB
• Volume: 43
• Category: Article
• ISSN: 0001-1541
• DOI: 10.1002/aic.690431335

✦ Synopsis

Elemental depth profile examined using secondary-ion mass spectroscopy and structural profile examined using grazing-incident X-ray difiactometry were applied to analyze the growth behavior of Pb, -, La,(Zr,Ti, ~ ,)03 (PLZTO) and Pb, -La,TiO, (PLTO) thin films deposited on a Si substrate. When deposited under a suitably high substrate temperature, the chamber's oxygen pressure was observed to substantiaUy influence the structure of the films. Low oxygen pressures (Po, < 0.01 mbar) deteriorate crystal structure without altering the composition of the films. Deposition of a buffer layer enhanced the formation kinetics of PLZTO and PLTO films. However, su@ciently thick SrTiO, ( -500 nm) layer was required to achieve this effect, Using ~La,,,Sr,,,)CoO,/Pt materials as double-layer electrodes not only prevented the filmto-substrate interaction, but resulted in preferentially oriented thin films. Ferroelectric properties of the films were thus greatly improved, with remanent polarization (Pr) around 14 -16 pC/cm2, coercive force (Ec) around 50 -60 kV/cm, and relative dielectric constant ( E , ) around 900 -1,000.