✦ LIBER ✦

Preparation and Properties of Boron Thin Films

✍ Scribed by Kiichi Kamimura; Miyako Ohkubo; Toshio Shinomiya; Masato Nakao; Yoshiharu Onuma

Publisher: Elsevier Science
Year: 1997
Tongue: English
Weight: 266 KB
Volume: 133
Category: Article
ISSN: 0022-4596
DOI: 10.1006/jssc.1997.7323

No coin nor oath required. For personal study only.

✦ Synopsis

Boron thin films were prepared by plasma assisted chemical vapor deposition. The source gas was boron trichloride (BCl 3 ). Ring patterns of transmission electron beam diffraction indicated that films were polycrystalline -rhombohedral boron. Optical absorption edge was estimated from absorption spectrum. The absorption edge was about 1.05 eV for the films deposited at 700°°C and was increased to about 1.4 eV as the deposition temperature increased to higher than 800°°C. The Hall mobility was 10 ؊4 -10 ؊1 cm 2 /Vs and the carrier concentration was 10 16 -10 18 cm ؊3 . All films showed p-type conduction. The piezoresistive gauge factor was about 10.

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