Boron thin films were prepared by plasma assisted chemical vapor deposition. The source gas was boron trichloride (BCl 3 ). Ring patterns of transmission electron beam diffraction indicated that films were polycrystalline -rhombohedral boron. Optical absorption edge was estimated from absorption spe
Preparation and Thermoelectric Property of Boron Thin Film
β Scribed by K. Kamimura; T. Yoshimura; T. Nagaoka; M. Nakao; Y. Onuma; M. Makimura
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 151 KB
- Volume
- 154
- Category
- Article
- ISSN
- 0022-4596
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β¦ Synopsis
Boron thin 5lms were deposited by electron beam evaporation and by pyrolysis of decaborane on quartz substrates. Re6ection electron beam di4raction was used to characterize the crystal structure. The amorphous structure was observed for the 5lm deposited by electron beam evaporation. The 5lm was polycrystalline -rhombohedral boron when the 5lm was deposited by pyrolysis. All samples showed p-type conduction. The conductance of the 5lm deposited by electron beam evaporation decreased linearly against T Ψ4 . Linear relation was observed in the log against T Ψ1 plot for the 5lm deposited by pyrolysis. The thermoelectric power of the 5lm deposited by electron beam evaporation decreased from 500 to 300 V/K as the temperature increased from 300 to 800 K. The power factor increased from 10 Ψ9 to 10 Ψ6 V 2 Ψ1 K Ψ2 cm Ψ1 with increasing temperature from 300 to 800 K.
π SIMILAR VOLUMES
Amorphous boron and boron phosphide 5lms were prepared on silica glass by a solid source molecular beam deposition (SSMBD) method and a low-pressure chemical vapor deposition method (LPCVD) by adapting gas source molecular beam deposition at a reactant pressure of 1.33 Pa. The 5lms were characterize
Boron+silicon amorphous 5lms were prepared by pulsed laser deposition technique. Band gap was estimated from the optical absorption spectrum for the 5lms, and it increased with increasing silicon concentration. The values and concentration dependence of the band gap are nearly the same as those meas
Electrical and thermal conductivities and thermoelectric power of p-type boron and n-type boron phosphide wafers with amorphous and polycrystalline structures were measured up to high temperatures. The electrical conductivity of amorphous boron wafers is compatible to that of polycrystals at high te