Thermoelectric Properties of Boron and Boron Phosphide CVD Wafers

✍ Scribed by Y. Kumashiro; T. Yokoyama; A. Sato; Y. Ando

• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 710 KB
• Volume: 133
• Category: Article
• ISSN: 0022-4596
• DOI: 10.1006/jssc.1997.7493

✦ Synopsis

Electrical and thermal conductivities and thermoelectric power of p-type boron and n-type boron phosphide wafers with amorphous and polycrystalline structures were measured up to high temperatures. The electrical conductivity of amorphous boron wafers is compatible to that of polycrystals at high temperatures and obeys Mott's T !1/4 rule. The thermoelectric power of polycrystalline boron decreases with increasing temperature, while that of amorphous boron is almost constant in a wide temperature range. The weak temperature dependence of the thermal conductivity of BP polycrystalline wafers reflects phonon scattering by grain boundaries. Thermal conductivity of an amorphous boron wafer is almost constant in a wide temperature range, showing a characteristic of a glass. The figure of merit of polycrystalline BP wafers is 10 !7 /K at high temperatures while that of amorphous boron is 10\ 5 /K.