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Preparation of Boron and Boron Phosphide Films by Photo- and Thermal Chemical Vapor Deposition Processes

✍ Scribed by Y Kumashiro; K Sato; S Chiba; S Yamada; D Tanaka; K Hyodo; T Yokoyama; K Hirata

Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
240 KB
Volume
154
Category
Article
ISSN
0022-4596

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✦ Synopsis

We have calculated 5rst excitation energies, oscillator strengths, and potential energy surfaces of B 2 H 6 and PH 3 by using an ab initio molecular orbital method to con5rm that the deuterium lamp is e4ective for the excitation of both B 2 H 6 and PH 3 in the photo-chemical vapor deposition (photo-CVD) process. The deuterium lamp is useful for growing the 5lm at 600+10003C in the B 2 H 6 +PH 3 +H 2 system. The activation energies for 5lm growth for thermal CVD decrease by using the deuterium lamp. Boron phosphide 5lm grew epitaxially on Si(100) plane with a deuterium lamp at lower temperature than by thermal CVD at 1003C. The electrical properties of boron and boron phosphide 5lms on silica glass were improved by deuterium.

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