Epitaxial Growth of Rhombohedral Boron Phosphide Single Crystalline Films by Chemical Vapor Deposition

✍ Scribed by Y. Kumashiro; H. Yoshizawa; T. Yokoyama

• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 683 KB
• Volume: 133
• Category: Article
• ISSN: 0022-4596
• DOI: 10.1006/jssc.1997.7324

✦ Synopsis

Rhombohedral boron phosphide (B 12 P 2 ) single crystalline films were grown at 1100°C by thermal decomposition of a B 2 H 6 -PH 3 -H 2 gas mixture. The crystal quality and orientation of the films, determined by reflection high-energy electron diffraction and X-ray diffraction, are strongly influenced by the flow rates of reactant gases. The epitaxial relationships are B 12 P 2 (112 0)[0001] # Si ( 100)[010], [011] and B 12 P 2 (101 1)[12 10], [101 4] # Si (100)[010], of eight-and twofold symmetry, respectively. The distribution of the two planes in the films changes along the growth direction. The epitaxial relationship on the Si (111) surface is B 12 P 2 (1010)[0001] # Si ( 111) [110]. The B 12 P 2 (022 1) plane grows near the substrate, but the existence of the (101 0) plane increases during the crystal growth process. The optimum flow rates of B 2 H 6 and PH 3 are 30 sccm for the best epitaxy, which occurs for the lowest mismatch.