𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Epitaxial growth of α-SiC layers by chemical vapor deposition technique

✍ Scribed by Hiroyuki Matsunami; Shigehiro Nishino; Masanori Odaka; Tetsuro Tanaka


Publisher
Elsevier Science
Year
1975
Tongue
English
Weight
441 KB
Volume
31
Category
Article
ISSN
0022-0248

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Epitaxial Growth of Rhombohedral Boron P
✍ Y. Kumashiro; H. Yoshizawa; T. Yokoyama 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 683 KB

Rhombohedral boron phosphide (B 12 P 2 ) single crystalline films were grown at 1100°C by thermal decomposition of a B 2 H 6 -PH 3 -H 2 gas mixture. The crystal quality and orientation of the films, determined by reflection high-energy electron diffraction and X-ray diffraction, are strongly influen