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Thermal characteristics of InP, InAlAs, and AlGaAsSb metamorphic buffer layers used in In0.52Al0.48As/In0.53Ga0.47As heterojunction bipolar transistors grown on GaAs substrates

✍ Scribed by Y. M. Kim; M. J. W. Rodwell; A. C. Gossard

Publisher: Springer US
Year: 2002
Tongue: English
Weight: 78 KB
Volume: 31
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-002-0206-4

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