✦ LIBER ✦

Characteristics of In0.53Ga0.47As/InP double and single heterostructure-emitter bipolar transistors grown by LP-MOCVD

✍ Scribed by Y.H. Wu; J.S. Su; W.C. Hsu; W.C. Liu; W. Lin

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Growth and characterisation of quantum w

✍ P.A. Claxton; J.S. Roberts; J.P.R. David; C.M. Sotomayor-Torres; M.S. Skolnick; 📂 Article 📅 1987 🏛 Elsevier Science 🌐 English ⚖ 612 KB

Gettering Properties of Praseodymium in

✍ Dr. Gwo-Cherng Jiang 📂 Article 📅 1996 🏛 John Wiley and Sons 🌐 English ⚖ 420 KB 👁 1 views

Raman studies of InAs/In0.53Ga0.47As sin

✍ Lucia G. Quagliano; M.Gabriella Simeone; M.Rita Bruni; Narciso Gambacorti; Marco 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 146 KB

Characterization of Ga0.47In0.53As and A

✍ J. Massies; J.F. Rochette; P. Etienne; P. Delescluse; A.M. Huber; J. Chevrier 📂 Article 📅 1983 🏛 Elsevier Science 🌐 English ⚖ 908 KB

Growth and characterization of high-qual

📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 130 KB

Investigations on structural and optical

📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 129 KB