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Growth and characterization of high-quality InP/Ga0.25In0.75As0.5P0.5 and InP/Ga0.17In0.83As0.35P0.65 grown by the LP-MOCVD technique : M. Defour, F. Ohmes, P. Maurel and M. Razeghi. Revue tech. Thomson-CSF, 20–21(3), 387 (1989) (in French)

Publisher: Elsevier Science
Year: 1990
Tongue: English
Weight: 130 KB
Volume: 30
Category: Article
ISSN: 0026-2714
DOI: 10.1016/0026-2714(90)90650-c

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