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Raman studies of InAs/In0.53Ga0.47As single quantum wells grown on InP substrate by M.B.E.

✍ Scribed by Lucia G. Quagliano; M.Gabriella Simeone; M.Rita Bruni; Narciso Gambacorti; Marco Zugarini


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
146 KB
Volume
17
Category
Article
ISSN
0749-6036

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Effects of SiN x deposition on undoped Ga 0.47 In 0.53 As bulk layer grown on InP substrate were investigated using Raman spectroscopy. No Raman shift as a result of strain induced from the dielectric deposition was observed in the Ga 0.47 In 0.53 As material, whatever the thickness and the temperat