Raman characterization of SiNx depositio
β
B. Boudart; C. Gaquière; M. Constant; A. Lorriaux; N. Lefebvre
π
Article
π
1999
π
John Wiley and Sons
π
English
β 93 KB
π 1 views
Effects of SiN x deposition on undoped Ga 0.47 In 0.53 As bulk layer grown on InP substrate were investigated using Raman spectroscopy. No Raman shift as a result of strain induced from the dielectric deposition was observed in the Ga 0.47 In 0.53 As material, whatever the thickness and the temperat