Raman characterization of SiNx deposition on undoped Ga0.47In0.53As material grown on InP substrate

✍ Scribed by B. Boudart; C. Gaquière; M. Constant; A. Lorriaux; N. Lefebvre

• Publisher: John Wiley and Sons
• Year: 1999
• Tongue: English
• Weight: 93 KB
• Volume: 30
• Category: Article
• ISSN: 0377-0486
• DOI: 10.1002/(sici)1097-4555(199908)30:8<715::aid-jrs439>3.0.co;2-t

✦ Synopsis

Effects of SiN x deposition on undoped Ga 0.47 In 0.53 As bulk layer grown on InP substrate were investigated using Raman spectroscopy. No Raman shift as a result of strain induced from the dielectric deposition was observed in the Ga 0.47 In 0.53 As material, whatever the thickness and the temperature deposition used in the technological process. Some changes in the Raman spectra due to surface disorder effects were evidenced for the Ga 0.47 In 0.53 As samples passivated at 300 • C. These effects were confirmed by photocarrier-assisted experiments.