Effects of SiN x deposition on undoped Ga 0.47 In 0.53 As bulk layer grown on InP substrate were investigated using Raman spectroscopy. No Raman shift as a result of strain induced from the dielectric deposition was observed in the Ga 0.47 In 0.53 As material, whatever the thickness and the temperat
β¦ LIBER β¦
Microwave noise performance of metamorphic InP/In0.53Ga0.47As/InP DHBT on GaAs substrates
β Scribed by Yong Zhong Xiong; Geok-Ing Ng; Hong Wang; Jeffrey S. Fu
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 105 KB
- Volume
- 33
- Category
- Article
- ISSN
- 0895-2477
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