Depth profiling of an In0.53Ga0.47As/InP multilayer sample using grazing-incidence sputtered neutral mass spectrometry with laser post-ionization
✍ Scribed by Higashi, Yasuhiro; Maruo, Tetsuya; Homma, Yoshikazu
- Publisher
- John Wiley and Sons
- Year
- 1998
- Tongue
- English
- Weight
- 199 KB
- Volume
- 26
- Category
- Article
- ISSN
- 0142-2421
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✦ Synopsis
Depth proÐling of thin layers in InP using sputtered neutral mass spectrometry with grazing-In 0.53 Ga 0.47 As incidence ion beam sputtering and laser post-ionization was performed and compared with SIMS and AES depth proÐling. The depth resolution was improved by using grazing incidence (at an incident angle of 77Ä) of a 10 keV Ar' primary beam and was better than that in the AES measurement with 1 keV Ar' bombardment at 70.3Ä and sample rotation. The distortion of the indium proÐle at the interface that was observed in the In 0.53 Ga 0.47 As/InP SIMS measurement with 2 keV bombardment at 81Ä was not observed in the grazing-incidence sputtered O 2 ' neutral mass spectrometry measurement.