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Gettering Properties of Praseodymium in GaAs, In0.53Ga0.47As, and InP Grown by Liquid Phase Epitaxy

✍ Scribed by Dr. Gwo-Cherng Jiang

Publisher: John Wiley and Sons
Year: 1996
Tongue: English
Weight: 420 KB
Volume: 31
Category: Article
ISSN: 0232-1300
DOI: 10.1002/crat.2170310316

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