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Effect of In-Doping on the Properties of as-Grown p-Type GaN Grown by Metalorganic Vapour Phase Epitaxy

✍ Scribed by Yamaguchi, S. ;Iwamura, Y. ;Watanabe, Y. ;Kosaki, M. ;Yukawa, Y. ;Nitta, S. ;Kamiyama, S. ;Amano, H. ;Akasaki, I.

Publisher: John Wiley and Sons
Year: 2002
Tongue: English
Weight: 83 KB
Volume: 192
Category: Article
ISSN: 0031-8965
DOI: 10.1002/1521-396x(200208)192:2<453::aid-pssa453>3.0.co;2-i

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