Photoluminescence measurements of GaAs grown by liquid phase epitaxy from Ga–Bi solution

✍ Scribed by M. Ciorga; L. Bryja; J. Misiewicz; R. Paszkiewicz; M. Panek; B. Paszkiewicz; M. Tłaczała

• Publisher: John Wiley and Sons
• Year: 1998
• Tongue: English
• Weight: 102 KB
• Volume: 8
• Category: Article
• ISSN: 1616-301X
• DOI: 10.1002/(sici)1099-0712(199801/02)8:1<9::aid-amo322>3.0.co;2-u

✦ Synopsis

Thick, intentionally undoped GaAs epitaxial layers grown by LPE from Ga-Bi solution with different contents of Bi in liquid solvent (from 0 to 82 at.%Bi) were studied by photoluminescence (PL) at temperature T 2 K. The dependence of the photoluminescence spectrum on the content of Bi in solution was analysed. *