Liquid phase epitaxy of SiC in the system TbSiSiC by temperature gradient zone melting (III). Epitaxial layer properties

✍ Scribed by Dr. N. S. Peev; Yu. M. Tairov; N. A. Smirnova; A. A. Kalnin

• Publisher: John Wiley and Sons
• Year: 1987
• Tongue: English
• Weight: 339 KB
• Volume: 22
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.2170220116

✦ Synopsis

Liquid Phase Epihxy of Sic in the System Tb-Si-Sic by Temperature Gradient Zone Melting (111)

Epitaxial Layer Properties

I n the present work the electrophysical and structural properties of tlie RiC epitaxial layers grown by the temperature gradient 70118 melting method in vacuum conditions is considered. Some correlations between the epitaxial layer properties and the process conditions are observed. T t is shown that the performencc of the growth process in vacuuiii leads t o a significant improvement of the layer quality, if one observes sortie repuirementsliow t o decrease significantly the number of the second phase inclusions and how t o itiiprove the structural perfection of tlie layers.