Effects of SiN x deposition on undoped Ga 0.47 In 0.53 As bulk layer grown on InP substrate were investigated using Raman spectroscopy. No Raman shift as a result of strain induced from the dielectric deposition was observed in the Ga 0.47 In 0.53 As material, whatever the thickness and the temperat
Raman and photoluminescence analyses of the crystalline InAlAs layer grown on InP substrate
β Scribed by G. C. Jiang; Dr. Y. D. Juang; J. J. Chyi; S. Lu; Dr. L. B. Chang
- Publisher
- John Wiley and Sons
- Year
- 1995
- Tongue
- English
- Weight
- 290 KB
- Volume
- 30
- Category
- Article
- ISSN
- 0232-1300
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The e β ect of di β erent polarization orientations of the excitation source on the Raman and photoluminescence (PL) spectra of a porous silicon (PS) layer within two di β erent micro-regions was investigated. Two micro-regions (2 lm) along the (100) direction were studied, close to the crystalline sil
We have studied ZnSe films grown on ZnTe (001) substrate by using MBE method. The surface reconstruction of ZnSe is investigated systematically by RHEED. The Zn beam irradiation during thermal cleaning was done to suppress the desorption of Zn atoms from ZnTe substrate. The 3D growth occurs at initi