The Structural and Optical Characterization of MBE-ZnSe Layer Grown on High-Quality VGF-ZnTe Substrate

✍ Scribed by M. Yoneta; K. Nanami; M. Ohishi; K. Yoshino; H. Saito

• Publisher: John Wiley and Sons
• Year: 2002
• Tongue: English
• Weight: 115 KB
• Volume: 229
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/1521-3951(200201)229:1<127::aid-pssb127>3.0.co;2-w

✦ Synopsis

We have studied ZnSe films grown on ZnTe (001) substrate by using MBE method. The surface reconstruction of ZnSe is investigated systematically by RHEED. The Zn beam irradiation during thermal cleaning was done to suppress the desorption of Zn atoms from ZnTe substrate. The 3D growth occurs at initial growth stage. After 5 min of growth, streak patterns indicated that 2D growth was achieved in the ZnSe/ZnTe heteroepitaxial growth. The structural and optical properties of the ZnSe layers are characterized by photoluminescence and X-ray diffraction measurements. Four emission peaks were observed, and then a band gap energy increase of about 3 meV was confirmed. Lattice relaxation took place in the layers with thickness below 0.1 mm, and the layers suffered from the compressive strain due to the difference in the thermal expansion coefficients.