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Growth and characterisation of quantum wells and selectively doped heterostructures of InP/Ga0.47In0.53As grown by solid source MBE

✍ Scribed by P.A. Claxton; J.S. Roberts; J.P.R. David; C.M. Sotomayor-Torres; M.S. Skolnick; P.R. Tapster; K.J. Nash

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

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First Experimental Proof of Excitons and

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✍ J. Geurts; J. Finders; J. Woitok; D. Gnoth; A. Kohl; K. Heime 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 515 KB

Characterization of Ga0.47In0.53As and A

✍ J. Massies; J.F. Rochette; P. Etienne; P. Delescluse; A.M. Huber; J. Chevrier 📂 Article 📅 1983 🏛 Elsevier Science 🌐 English ⚖ 908 KB

Growth parameter dependence of backgroun

✍ J.L. Benchimol; F. Alexandre; Y. Gao; F. Alaoui 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 257 KB