Characterization of the interface abruptness of In0.53Ga0.47As/InP multi quantum wells by Raman spectroscopy, X-ray diffractometry and photoluminescence

✍ Scribed by J. Geurts; J. Finders; J. Woitok; D. Gnoth; A. Kohl; K. Heime

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 515 KB
• Volume: 145
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/0022-0248(94)91147-9