✦ LIBER ✦
Novel In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistors on GaAs substrate with InxGa1−xP graded buffer layers
✍ Scribed by K. Yuan; K. Radhakrishnan; H.Q. Zheng; S.F. Yoon
- Publisher
- Elsevier Science
- Year
- 2001
- Tongue
- English
- Weight
- 116 KB
- Volume
- 4
- Category
- Article
- ISSN
- 1369-8001
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