In0.53Ga0.47As>In0.52Al0.48As quantum wire structures grown on (775)B-oriented InP substrates by molecular beam epitaxy

✍ Scribed by S. Hiyamizu; Y. Ohno; S. Shimomura

• Publisher: Elsevier Science
• Year: 1999
• Tongue: English
• Weight: 423 KB
• Volume: 47
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(99)00201-4

✦ Synopsis

Self-organized In,,,Ga,,,As/ In,,&.& quantum wire (QWR) structures were formed on (775)B InP substrates by molecular beam epitaxy (MBE) which showed good one-dimensionality (the polarization degree P [ = (I,, -I, )/(I,,+ I, )] as large as 0.2) and long emitting wavelengths in the range of 1.2 um at 12K.