Electron–phonon interaction studies in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well structure
✍ Scribed by C. Prasad; D.K. Ferry; D. Vasileska; H.H. Wieder
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 773 KB
- Volume
- 19
- Category
- Article
- ISSN
- 1386-9477
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📜 SIMILAR VOLUMES
We have confirmed by analyzing beating patterns of Shubnikov-de Haas oscillations that a spin-orbit interaction of the conduction band in an InAs-inserted In Ga As/In Al As heterostructure can be controlled by applying the gate voltage. The change in the spin-orbit interaction can be attributed to t
We observed that a series of peaks, which were clearly extracted from a photocurrent difference spectrum, corresponded to interband optical transitions of an In 0.53 Ga 0.47 As/ In 0.52 Al 0.48 As multi-quantum wells structure. The nonparabolic tendency of the electron effective mass was suggested f