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Gate control of spin–orbit interaction in an InAs-inserted In0.53Ga0.47As/In0.52Al0.48As heterostructure

✍ Scribed by Junsaku Nitta; Tatsushi Akazaki; Hideaki Takayanagi; Takatomo Enoki

Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
124 KB
Volume
2
Category
Article
ISSN
1386-9477

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✦ Synopsis

We have confirmed by analyzing beating patterns of Shubnikov-de Haas oscillations that a spin-orbit interaction of the conduction band in an InAs-inserted In Ga As/In Al As heterostructure can be controlled by applying the gate voltage. The change in the spin-orbit interaction can be attributed to the Rashba term. Comparison with an In Ga As/In Al As heterostructure reveals that the spin-orbit interaction in the InAs-inserted system is more sensitive to the carrier concentration.

📜 SIMILAR VOLUMES

Quantum well thickness dependence of spi
Quantum well thickness dependence of spin orbit interaction in gated InP/In0.8Ga0.2As/In0.52Al0.48As asymmetric quantum wells
✍ Makoto Kohda; Takayuki Nihei; Junsaku Nitta 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 247 KB

We have investigated the influence of the quantum well (QW) thickness for the gate controlled Rashba spin orbit interaction (SOI) in InP/In 0.8 Ga 0.2 As/In 0.52 Al 0.48 As asymmetric QWs from the analysis of the weak antilocalization. We prepared two different samples with 5 and 10 nm In 0.8 Ga 0.2